Resonant Raman spectroscopy of individual metallic and semiconducting single-wall carbon nanotubes under uniaxial strain -: art. no. 035425

被引:151
作者
Cronin, SB [1 ]
Swan, AK
Ünlü, MS
Goldberg, BB
Dresselhaus, MS
Tinkham, M
机构
[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[4] Boston Univ, Dept Phys, Boston, MA 02215 USA
[5] MIT, Dept Phys, Cambridge, MA 02139 USA
[6] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 03期
关键词
D O I
10.1103/PhysRevB.72.035425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Uniaxial strain is induced by pushing single-wall carbon nanotubes (SWNTs) with an atomic force microscope tip. The vibrational and electronic energies of nanotubes are found to be very sensitive to strain. For both metallic and semiconducting SWNTs under strain, the D, G, and G' band Raman modes are downshifted by up to 27, 15, and 40 cm(-1), respectively. The relative strain-induced shifts of the D, G, and G(') bands vary significantly from nanotube to nanotube, implying that there is a strong chirality dependence of the relative shifts. Semiconducting SWNTs remain strongly resonant under these large deformations, while metallic SWNTs appear to move in and out of resonance with strain, indicating a strain-induced shifting of the electronic subbands. Tight-binding calculations of the electronic band structure of semiconducting and metallic nanotubes under uniaxial strain predict significant shifting of the subband energies, leading to strain-induced changes in the Raman intensity. These theoretical predictions are consistent with what we observe experimentally for metallic nanotubes, but not for semiconducting nanotubes.
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页数:8
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