Measurement of the energetics of metal film growth on a semiconductor: Ag/Si(100)-(2 x 1)

被引：26

作者：

Starr, DE ^{[1
]}

Ranney, JT ^{[1
]}

Larsen, JH ^{[1
]}

Musgrove, JE ^{[1
]}

Campbell, CT ^{[1
]}

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.87.106102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300 K decreases from similar to 347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0 ML, but is metastable above similar to0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain in the substrate surface nearby.

引用

页码：art. no. / 106102

页数：4

共 33 条

[1] Melting of isolated tin nanoparticles [J].