Atomic structure of Ag grown on Si(001) (2 x 1) at high temperature

被引：9

作者：

Cho, WS

Kim, JY

Park, NG

Chae, KH

Kim, YW

Lyo, IW

Kim, SS

Choi, DS

Whang, CN ^{[1
]}

机构：

[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

[3] Mokwon Univ, Dept Phys, Taejon 301729, South Korea

[4] Kangweon Natl Univ, Dept Phys, Chunchon 200701, Kangwondo, South Korea

来源：

SURFACE SCIENCE | 1999年 / 439卷 / 1-3期

关键词：

low energy ion scattering (LEIS); silicon; silver; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(99)00816-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic structures of Ag grown on Si(001) (2 x 1) surface at an elevated substrate temperature of 600 degrees C have been studied by coaxial impact collision ion scattering spectroscopy. At a substrate temperature of 600 degrees C, the Ag grows in the Stranski-Krastanov mode. The three-dimensional Ag islands have the structure of Ag(001)//Si(001) and Ag[100]//Si[100] with a good crystallinity. The interlayer spacing between the first and third layers is d(13) =4.09 +/- 0.05 Angstrom. It is found that the Ag atoms in the two-dimensional layer are positioned on the cave site between Si dimers with different heights of 0.8 and 1.5 Angstrom from the Si(001) (2 x 1) surface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L792 / L798

页数：7

共 22 条

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