Surface unwetting during growth of Ag on Si(001)

被引：41

作者：

Glueckstein, JC ^{[1
]}

Evans, MMR ^{[1
]}

Nogami, J ^{[1
]}

机构：

[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.R11066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room-temperature growth mode of Ag on Si(001) was studied using scanning tunneling microscopy. This system grows in a Stranski-Krastanov mode, but the nature of the initial two-dimensional layer has remained controversial. These results show that a two-dimensional Ag layer completely covers the surface at one monolayer. Above one monolayer, three-dimensional Ag islands nucleate and the two-dimensional layer partially unwets the surface. This unwetting phenomenon explains some of the discrepancies between prior studies.

引用

页码：11066 / 11069

页数：4

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