AG ON THE SI(001) SURFACE - GROWTH OF THE 1ST MONOLAYER AT ROOM-TEMPERATURE

被引:57
作者
LIN, XF [1 ]
WAN, KJ [1 ]
NOGAMI, J [1 ]
机构
[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 20期
关键词
D O I
10.1103/PhysRevB.47.13491
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Growth of the first monolayer (ML) of Ag on the Si(001) surface at room temperature has been studied by means of scanning tunneling miroscopy (STM) and low-energy electron diffraction. Ag atoms form single-layer islands with a density of one Ag atom per Si surface atom. These Ag islands exhibit both local 2 X 1 and 2 X 2 order. As the Ag coverage approaches 1 ML, the 2 X 1 order disappears in favor of the 2 X 2 order. One ML of Ag is required to complete the first full surface layer. There is no evidence of three-dimensional Ag growth up to 1 ML. Models of the 2 X 1 and 2 X 2 surface structures are proposed on the basis of the STM images.
引用
收藏
页码:13491 / 13497
页数:7
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