Characterizing residual reflections within semiconductor lasers, integrated sources, and coupling optics

被引：13

作者：

Ackerman, DA ^{[1
]}

Zhang, LM ^{[1
]}

Ketelsen, LJP ^{[1
]}

Johnson, JE ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 07期

关键词：

distributed feedback lasers; electroabsorption; integrated optics; reflections; reflectometry; semiconductor lasers;

D O I：

10.1109/3.687866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a method for analyzing reflections within or near semiconductor lasers and more complicated integrated sources. Through Fourier transformation of an optical spectrum from the wavevector to the length domain, reflections are analyzed for strength, round-trip path length, and current or voltage dependence. Identification of reflections from within semiconductor lasers, integrated electro-absorption modulated lasers, and from coupling optics is presented. Spatial resolution in InP of similar to 5 mu m with over two orders of magnitude in dynamic range is demonstrated. Inverse transformation of a spatially resolved feature in a transformed reflection spectrum provides an optical spectrum due to that individual feature of sufficient resolution to study wavelength dependence, for example, of coatings and gratings.

引用

页码：1224 / 1230

页数：7

共 8 条

[1]

ACKERMAN DA, 1992, Patent No. 5111457

[2]

ACKERMAN DA, 1997, P OPT FIB COMM C 97

[3]

BARAFF GA, UNPUB WEAK REFLECTIO

[4] PERFORMANCE OF DISTRIBUTED FEEDBACK LASERS DESIGNED TO FAVOR THE ENERGY-GAP MODE [J].