Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy

被引：55

作者：

Imada, S

Kuraoka, T

Tokumitsu, E

Ishiwara, H

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 2A期

关键词：

ferroelectric; Y2O3; YMnO3; molecular beam epitaxy; epitaxial growth; Si;

D O I：

10.1143/JJAP.40.666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric YMnO3 (YMO) thin films were grown on Pt/Al2O3 (0001) and Pt/Y2O3/Si (111) structures using Y2O3 buffer layers by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) analyses and X-rap diffraction (XRD) analyses showed that both Y2O3 and YMO films were epitaxially grown on both substrates. Capacitance-voltage (C-V) measurement for a YMO film on the Pt/Al2O3 structure showed a butterfly-type curve with a memory window of 0.85 V. The remanent polarization (2P(r)) of the film was determined to be larger than 0.7 muC/cm(2) from Sawyer-Tower measurement. Ferroelectricity of a YMO film in the Al/YMO/Y2O3/Pt/Y2O3/Si(111) structure was almost the same as that on Pt/Al2O3, which indicated that the effect of the different thermal expansion coefficients of the substrates was not significant.

引用

页码：666 / 671

页数：6

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