Electron conduction through surface states of the Si(111)-(7 x 7) surface

被引：67

作者：

Heike, S

Watanabe, S

Wada, Y

Hashizume, T

机构：

[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

[2] Japan Sci & Technol Corp, CREST, Hatoyama, Saitama 3500395, Japan

[3] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.81.890

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic properties of the Si(111)-(7 x 7) surface are evaluated by scanning tunneling microscopy/ spectroscopy (STM/STS) using artificially fabricated insulating trenches. When the surface is surrounded by a closed trench, the effect of the Schottky barrier naturally formed between the surface states and the bulk states is observed by STM. When a half-closed tape-shaped structure surrounded by the trench is fabricated, the current path is dominated by that through surface states. Its conductivity is estimated by measuring the voltage drop along the structure.

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页码：890 / 893

页数：4

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