Electrical contact to porous silicon by electrodeposition of iron

被引：46

作者：

Ronkel, F ^{[1
]}

Schultze, JW ^{[1
]}

ArensFischer, R ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

electrochemistry; X-ray photoelectron spectroscopy (XPS); deposition process; silicon;

D O I：

10.1016/0040-6090(95)08045-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrodeposition of iron into porous n-type silicon (n-PS) was investigated. The electrodeposition was performed potentiostatically as well as potentiodynamically. Current efficiency was proved by anodic dissolution. The deposition is only possible after removal of the oxide layer, which covers the surface and pore walls of n-PS. The deposit was studied with X-ray photoelectron spectroscopy sputter depth profiling.

引用

页码：40 / 43

页数：4

共 4 条

[1] ELECTRODEPOSITION OF METALS INTO POROUS SILICON [J].

JESKE, M ;

SCHULTZE, JW ;

THONISSEN, M ;

MUNDER, H .

THIN SOLID FILMS, 1995, 255 (1-2) :63-66

[2] XPS INVESTIGATIONS OF ELECTROCHEMICALLY MODIFIED POROUS SILICON LAYERS [J].

JESKE, M ;

JUNG, KG ;

SCHULTZE, JW ;

THONISSEN, M ;

MUNDER, H .

SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) :363-366

[3] POROUS SILICON ELECTROLUMINESCENT DEVICES [J].

LANG, W ;

STEINER, P ;

KOZLOWSKI, F .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :341-349

[4] REGULAR NANOSTRUCTURED SYSTEMS-FORMED ELECTROCHEMICALLY - DEPOSITION OF ELECTROACTIVE POLYBITHIOPHENE INTO POROUS SILICON [J].

SCHULTZE, JW ;

JUNG, KG .

ELECTROCHIMICA ACTA, 1995, 40 (10) :1369-1383

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