XPS INVESTIGATIONS OF ELECTROCHEMICALLY MODIFIED POROUS SILICON LAYERS

被引：14

作者：

JESKE, M ^{[1
]}

JUNG, KG ^{[1
]}

SCHULTZE, JW ^{[1
]}

THONISSEN, M ^{[1
]}

MUNDER, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH,INST SCHICHT & IONENTECH,D-52425 JULICH,GERMANY

来源：

SURFACE AND INTERFACE ANALYSIS | 1994年 / 22卷 / 1-12期

关键词：

D O I：

10.1002/sia.740220179

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of electrochemical modifications like anodic oxidation, polymer deposition and electrodeposition of Cu and Ni on porous silicon are investigated with XPS and sputter depth profiling. It is shown that after the anodic oxidation small amounts of Si0 remain in the porous layer. The deposition of polymers as well as of metals takes place not only at the surface, but also in the porous layer.

引用

页码：363 / 366

页数：4

共 13 条

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