AN XPS STUDY OF THE INFLUENCE OF ION SPUTTERING ON BONDING IN THERMALLY GROWN SILICON DIOXIDE

被引：74

作者：

HOFMANN, S ^{[1
]}

THOMAS, JH ^{[1
]}

机构：

[1] RCA CORP LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期

关键词：

D O I：

10.1116/1.582540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SILICA

引用

页码：43 / 47

页数：5

共 29 条

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[J]. APPLIED PHYSICS, 1977, 12 (01): : 101 - 112
[9] AUGER ANALYSIS OF SIO2-SI INTERFACE
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037
[10] COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS
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LIN, CL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1061 - 1066

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