One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

被引：101

作者：

Wu, W

Jung, GY

Olynick, DL

Straznicky, J

Li, Z

Li, X

Ohlberg, DAA

Chen, Y

Wang, SY

Liddle, JA

Tong, WM

Williams, RS

机构：

[1] Hewlett Packard Corp, HP Labs, Quantum Sci Res, Palo Alto, CA 94304 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[3] Univ Calif Los Angeles, Sch Engn & Appl Sci, Los Angeles, CA 90095 USA

[4] Hewlett Packard Corp, InkJet Printing Grp, Technol Dev Operat, Corvallis, OR 97330 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 06期

关键词：

D O I：

10.1007/s00339-004-3176-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir-Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.

引用

页码：1173 / 1178

页数：6

共 13 条

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