Polarity switching and transient responses in single nanotube nanofluidic transistors

被引:135
作者
Fan, R [1 ]
Yue, M
Karnik, R
Majumdar, A
Yang, PD
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[3] Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevLett.95.086607
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.
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页数:4
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