RF measurement technique for characterizing thin dielectric films

被引：106

作者：

Ma, ZX ^{[1
]}

Becker, AJ ^{[1
]}

Polakos, P ^{[1
]}

Huggins, H ^{[1
]}

Pastalan, J ^{[1
]}

Wu, H ^{[1
]}

Watts, K ^{[1
]}

Wong, YH ^{[1
]}

Mankiewich, P ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

capacitance measurement; capacitors; dielectric measurements; microwave integrated circuits; microwave measurements;

D O I：

10.1109/16.704383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel technique for measuring the dielectric constant and loss tangent of a thin film dielectric material up to 5 GHz, The dielectric film needs to be deposited on a metal layer and capped with a metal electrode layer. The bottom metal layer does not have to be very conductive, as long as its sheet resistance is uniform and known. Only one step lithography on the top metal layer is required. No de electrical contact to the bottom metal layer is necessary, The measurement is taken with a Vector Network Analyzer and a coplanar-wave-guide miniature wafer probe.

引用

页码：1811 / 1816

页数：6