Nanostructured Ge distribution in a-SiGe: H alloys from anomalous small-angle X-ray scattering studies

被引：23

作者：

Goerigk, G

Williamson, DL

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 07期

关键词：

nanostructures; semiconductors; nanofabrications; photoconductivity and photovoltaics; synchrotron radiation;

D O I：

10.1016/S0038-1098(98)00391-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The nanostructures of hydrogenated amorphous silicon germanium alloys, a-Si(1 - x)Ge(x):H (x similar to 0.5 to 0.7), prepared by different plasma enhanced chemical vapor deposition techniques, are examined by anomalous small-angle X-ray scattering (ASAXS). Clear evidence of inhomogeneous distributions of Ge are found with correlation lengths of 1.0 to 1.4 nn. This non-uniformity is removed by enhanced ion bombardment during growth and it is reduced by hydrogen dilution of the plasma. These more homogeneous materials result in improved photovoltaic and opto-electronic performance. The anisotropic ASAXS from the Ge is consistent with Ge enrichment along columnar-like nanostructures. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：419 / 424

页数：6