Chemical mechanical polishing of copper and tantalum in potassium iodate-based slurries

被引：51

作者：

Li, Y ^{[1
]}

Babu, SV

机构：

[1] Clarkson Univ, Dept Mech, Potsdam, NY 13699 USA

[2] Clarkson Univ, Dept Chem Engn, Ctr Adv Mat Proc, Potsdam, NY 13699 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 02期

关键词：

D O I：

10.1149/1.1342185

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Polish rates of copper and tantalum were measured using potassium iodate-based slurries containing silica abrasives for several concentrations of potassium iodate and pH. The tantalum polish rate increases rapidly with pH beyond pH 10.0 and with 3% silica reaches a value of about 215 nm/min while copper polish rate under the same conditions is only about 45 nm/min. Also, the dissolution/passivation behaviors of copper as well as tantalum were investigated by electrochemical measurements. (C) 2001 The Electrochemical Society.

引用

页码：G20 / G22

页数：3

共 19 条

[1] INITIAL STUDY ON COPPER CMP SLURRY CHEMISTRIES [J].