Characteristics and luminescence of Ge doped ZnO films prepared by alternate radio frequency magnetron sputtering

被引：83

作者：

Fan, DH ^{[1
]}

Ning, ZY ^{[1
]}

Jiang, MF ^{[1
]}

机构：

[1] Suzhou Univ, Dept Phys, Key Lab Thin Solid Film Mat, Suzhou 215006, Jiangsu Provinc, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2005年 / 245卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

Ge doped ZnO films; Rf sputtering; photoluminescence;

D O I：

10.1016/j.apsusc.2004.10.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ge doped ZnO films have been deposited on Si(1 0 0) substrates by alternate rf sputtering of ZnO and Ge. The effects of doping and annealing on the optical and structural properties have been investigated by means of X-ray diffraction and photoluminescence (PL) spectra. With the increasing annealing temperature, the intensity of the ZnO(0 0 2) diffraction peak increases, indicating that the crystalline quality of the film improves. The samples annealed at 800 and 1000 degrees C there appear the GeO and GeO, diffraction peaks, and the intensity of the near ultra-violet emission at 395 nm increases greatly, while a weak yellow emission appears at 590 nm. The near ultra-violet emission could be attributed to the GeO color centers and exciton recombination. The yellow peak is probably related to Ge incorporated in the ZnO structure. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：414 / 419

页数：6

共 18 条

[1] Optically pumped lasing of ZnO at room temperature [J].