Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities

被引：67

作者：

Gruzintsev, AN ^{[1
]}

Volkov, VT ^{[1
]}

Yakimov, EE ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 03期

关键词：

D O I：

10.1134/1.1561514

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV spectral range. It has been shown that the incorporation of copper yields three types of point defects in ZnO: Cu-Zn (3d(10)), Cu-Zn (3d(9)), and Cu-i; and in silver, a single type: Ag-Zn (3d(10)). Precipitation of a silver oxide phase at the highest impurity concentration has been observed. Impurity incorporation leads to a pronounced increase in the resistance and photosensitivity of films. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：259 / 262

页数：4

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