Novel Ultra-Low Power RRAM with Good Endurance and Retention

被引：75

作者：

Cheng, C. H. ^{[1
,2
]}

Chin, Albert ^{[2
]}

Yeh, F. S. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, EE Dept, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept EE, Hsinchu, Taiwan

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

D O I：

10.1109/VLSIT.2010.5556180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high performance RRAM of ultra-low 4 mu W set power (-3.5 mu A at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4x10(5) at 85 degrees C, good 10(6) cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

引用

页码：85 / +

页数：2

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