Nucleation and growth of platelet bubble structures in He implanted silicon

被引：37

作者：

Fichtner, PFP

Kaschny, JR

Kling, A

Trinkaus, H

Yankov, RA

Mucklich, A

Skorupa, W

Zawislak, FC

Amaral, L

da Silva, MF

Soares, JC

机构：

[1] Univ Fed Rio Grande do Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

[2] Rossendorf Inc, Res Ctr, D-01314 Dresden, Germany

[3] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal

[4] Forschungszentrum Julich, Inst Festkorperforsch, D-5170 Julich, Germany

[5] Inst Tecnol & Nucl, P-2685 Sacavem, Portugal

[6] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 136卷

关键词：

He bubbles; defects; ion implantation; silicon;

D O I：

10.1016/S0168-583X(97)00714-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

He(+) ions were implanted into(1 0 0) Si at energies from 30 to 120 keV and fluences from 5 x 10(15) to 1 x 10(16) cm(-2) After implantation, pieces of these samples were subjected to rapid thermal annealing for 600 s at temperatures ranging from 300 degrees C to 700 degrees C, The samples were analyzed by Transmission Electron Microscopy (TEM) and by Rutherford Backscattering and channeling spectrometry (RBS/C). The TEM observations were related to the RBS/C measurements and the results discussed in terms of a nucleation model to explain the formation of overpressurized bubbles in He implanted and annealed silicon. (C) 1998 Published by Elsevier Science B.V.

引用

页码：460 / 464

页数：5

共 11 条

[1] Application of hydrogen ion beams to Silicon On Insulator material technology [J].