Ultrahigh-speed integrated circuits using InP-based HEMTs

被引：91

作者：

Enoki, T

Yokoyama, H

Umeda, Y

Otsuji, T

机构：

[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

[2] Opt Network Syst Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

InGaAs; InAlAs; InP; HEMT; gate recess; gate delay; level shifter; optical communication systems;

D O I：

10.1143/JJAP.37.1359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The device technologies for 0.1-mu m-gate InP-based high electron mobility transistors (HEMTs), which consist of an InAlAs/InGaAs modulation-doped structure on an InP substrate, are described. They yielded a current gain cutoff frequency (ST) of over 180 GHz and a transconductance (g(m)) of over 1 S/mm in circuits. An InP recess-etch stopper improved the uniformity of threshold voltage and enabled us to apply HEMTs in digital ICs. A diode consisting of an InAlAs Schottky junction is monolithically integrated with a HEMT and used as a level shifter in digital ICs. By combining novel circuit technologies and the HEMT-IC technologies, the maximum operation speed of IC has been pushed up to over 40 Gbit/s. As a benchmark for future large-capacity networks, electrically multiplexed and demultiplexed 40 Gbit/s, 300 km transmission was successfully demonstrated using the device technologies described here.

引用

页码：1359 / 1364

页数：6

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