0.05-MU-M-GATE INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR AND REDUCTION OF ITS SHORT-CHANNEL EFFECTS

In this paper, we discusse the advantages of thinning the channel on short-channel effects for lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with sub-0.1-mu m-long gates with regard to the performance of a 0.05-mu m-gate device. To fabricate a sub-0.1-mu m gate, the opening shape of the gate-footprint is controlled by using a bilayer dielectric film system and RIE side etching. The device shows a current gain cutoff frequency of 300 GHz and g(m)/g(d) ratio of 15. Thinning the channel and the barrier down to 100 Angstrom improves carrier confinement and subthreshold characteristics and is indispensable for reducing the short-channel effects in the sub-0.1-mu m-gate-length region.