GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy

被引：80

作者：

Beck, RG ^{[1
]}

Eriksson, MA

Topinka, MA

Westervelt, RM

Maranowski, KD

Gossard, AC

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Div Appl Sci, Cambridge, MA 02138 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated scanning probe microscope cantilevers with dimensions 65 x 11.4 x 0.25 mu m(3) and 3 x 2 x 0.129 mu m(3) from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mice grating taken with the large cantilever having a deflection (force) noise 10 Angstrom/(root)Hz (19 pN/(root)Hz) at T = 2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e / (root)Hz, and is projected to have a deflection (force) noise of 0.002 Angstrom/(root)Hz (1 pN/(root)Hz) at T = 4.2 K. (C) 1998 American Institute of Physics. [S0003-6951(98)00734-7]

引用

页码：1149 / 1151

页数：3

共 16 条

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