Comparison of GIDL in p(+)-poly PMOS and n(+)-poly PMOS devices

被引：13

作者：

Lindert, N ^{[1
]}

Yoshida, M ^{[1
]}

Wann, C ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] HITACHI LTD,DEVICE DEV CTR,TOKYO 198,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 06期

关键词：

D O I：

10.1109/55.496459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate-Induced-Drain-leakage in LDD p-MOSFET's has been studied. The emphasis of this paper is on the comparison of GIDL in p(+)-poly PMOS versus n(+)-poly PMOS devices, Measurements will show that the GIDL is less severe in p(+)-poly devices, Clarification for modeling GIDL in devices with different drain structures is also provided.

引用

页码：285 / 287

页数：3