HOT-CARRIER-STRESS EFFECTS ON GATE-INDUCED DRAIN LEAKAGE CURRENT IN N-CHANNEL MOSFETS

被引：47

作者：

LO, GQ

JOSHI, AB

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, TX

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of hot-carrier stress on gate-induced drain leakage (GIDL) current in n-channel MOSFET's with thin gate oxides have been studied. It is found that the effects of generated interface traps (DELTA-D(it) and oxide trapped charge on the GIDL current enhancement are very different. Specifically, it is shown that the oxide trapped charge only shifts the flat-band voltage, unlike DELTA-D(it). Besides band-to-band (B-B) tunneling, DELTA-D(it) introduces an additional trap-assisted leakage current component. Evidence for this extra component is provided by hole injection. While trapped-charge induced leakage current can be eliminated by a hole injection subsequent to stress, such injection does not suppress interface-trap-induced leakage current.

引用

页码：5 / 7

页数：3

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