LEAKAGE-CURRENT-INDUCED HOT-CARRIER DEGRADATION OF P-CHANNEL MOSFETS

被引：12

作者：

RODDER, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：573 / 575

页数：3

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