Deep surface states on the interface between SiC and its native thermal oxide

被引：6

作者：

Ivanov, PA ^{[1
]}

Ignat'ev, KI ^{[1
]}

Panteleev, VN ^{[1
]}

Samsonova, TP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 10期

关键词：

D O I：

10.1134/1.1261806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (D-tm=2 x 10(12) cm(-2).eV(-1)) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the P-b centers observed in the SiO2/Si system. (C) 1997 American Institute of Physics. [S1063-7850(97)02710-9].

引用

页码：798 / 800

页数：3