Unipolar self-doping behavior in perovskite CH3NH3PbBr3

被引:193
作者
Shi, Tingting [1 ,2 ]
Yin, Wan-Jian [1 ,2 ]
Hong, Feng [1 ,2 ]
Zhu, Kai [3 ]
Yan, Yanfa [1 ,2 ]
机构
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[2] Univ Toledo, Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA
[3] Natl Renewable Energy Lab, Chem & Mat Sci Ctr, Golden, CO 80401 USA
关键词
SOLAR-CELL; HALIDE PEROVSKITES; EFFICIENT; TRANSPORT; ORIGINS; LENGTHS;
D O I
10.1063/1.4914544
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recent theoretical and experimental reports have shown that the perovskite CH3NH3PbI3 exhibits unique ambipolar self-doping properties. Here, we show by density-functional theory calculation that its sister perovskite, CH3NH3PbBr3, exhibits a unipolar self-doping behavior-CH3NH3PbBr3 presents only good p-type conductivity under thermal equilibrium growth conditions. We further show that despite a large bandgap of 2.2 eV, all dominant defects in CH3NH3PbBr3 create shallow levels, which partially explains the ultra-high open-circuit voltages achieved by CH3NH3PbBr3-based thin-film solar cells. Our results suggest that the perovskite CH3NH3PbBr3 can be both an excellent solar cell absorber and a promising low-cost hole-transport material for lead halide perovskite solar cells. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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