Perpendicular anisotropy L10-FePt based pseudo spin valve with Ag spacer layer

被引：26

作者：

Ho, P. ^{[1
,2
]}

Han, G. C. ^{[2
]}

Evans, R. F. L. ^{[3
]}

Chantrell, R. W. ^{[3
]}

Chow, G. M. ^{[1
]}

Chen, J. S. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

[2] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 13期

关键词：

FEPT THIN-FILMS; MICROSTRUCTURE; ALLOYS; GMR;

D O I：

10.1063/1.3571450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of post-annealing temperature of the Ag spacer layer on the structural, magnetic, spin, and magneto-transport properties of perpendicular anisotropy pseudo spin valves L1(0)-Fe50Pt50/Ag/L1(0)-Fe50Pt50 had been investigated. The Ag spacer layer was post-annealed at various temperatures of 300, 400, and 500 degrees C. A giant magnetoresistance ratio of 1.1% and 2.2% was achieved at room temperature and 77 K, respectively, when Ag was post-annealed at 300 degrees C. This was a significant improvement from the use of Au, Pt, and Pd spacer materials. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571450]

引用

页数：3

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