Fabrication and calibration of a gas sensor based on chemically vapor deposited WO3 films on silicon substrates Application to H2 sensing

被引:31
作者
Davazoglou, D [1 ]
Dritsas, T [1 ]
机构
[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece
关键词
fabrication; silicon substrates; LPCVD; WO3; H-2; sensing;
D O I
10.1016/S0925-4005(01)00734-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The electrical resistance of low pressure chemically vapor deposited (LPCVD) WO3 films exhibits reversible changes when gases, such as hydrogen, are present in their environment. Within the frame of this work, WO3 films activated with some gold monolayers were integrated, together with a polysilicon hearer and two temperature-sensing resistors, on the same silicon substrate. For the fabrication, processes typically used in the manufacturing of silicon-based integrated circuits were used. After fabrication, dies with dimensions of 5 mm x 5 mm have been packed and wire-bonded in classic dual in-line (DIL) packages. The temperature-sensing resistors were calibrated by external heating and monitoring their electrical resistance. Devices were tested in H-2 and were found to be sensitive to concentrations down to 100 ppm. Sensitivity was dependent on temperature and H-2 concentration. The maximum sensitivity (approximately 50%) was observed at temperatures around 120 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:359 / 362
页数:4
相关论文
共 10 条
[1]  
AKIYAMA M, 1993, SENSOR ACTUAT B-CHEM, V13, P619
[2]  
[Anonymous], 1999, INT TECHNOLOGY ROADM
[3]   Low pressure chemically vapor deposited WO3 thin films for integrated gas sensor applications [J].
Davazoglou, D ;
Georgouleas, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) :1346-1350
[4]   Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO)(6) pyrolysis [J].
Davazoglou, D ;
Moutsakis, A ;
Valamontes, V ;
Psycharis, V ;
Tsamakis, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :595-599
[5]   SURFACE-CHEMISTRY OF GAS SENSORS - H2S ON WO3 FILMS [J].
DWYER, DJ .
SENSORS AND ACTUATORS B-CHEMICAL, 1991, 5 (1-4) :155-159
[6]  
HOFHEINS B, 1995, SENSORS, V12, P131
[7]  
KAMIMORI M, 1994, JPN J APPL PHYS, V33, P6680
[8]   WO3 SPUTTERED THIN-FILMS FOR NOX MONITORING [J].
SBERVEGLIERI, G ;
DEPERO, L ;
GROPPELLI, S ;
NELLI, P .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :89-92
[9]  
SCHUTZ R, 1988, VLSI TECHNOLOGY, P185
[10]   GRAIN-SIZE EFFECTS IN TUNGSTEN OXIDE-BASED SENSOR FOR NITROGEN-OXIDES [J].
TAMAKI, J ;
ZHANG, Z ;
FUJIMORI, K ;
AKIYAMA, M ;
HARADA, T ;
MIURA, N ;
YAMAZOE, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) :2207-2210