Shot-noise and edge roughness effects in resists patterned at 10 nm exposure

被引：55

作者：

Rau, N ^{[1
]}

Stratton, F

Fields, C

Ogawa, T

Neureuther, A

Kubena, R

Willson, G

机构：

[1] Univ Calif Berkeley, Elect Res Lab, Berkeley, CA 94720 USA

[2] Hughes Res Labs, Malibu, CA 90265 USA

[3] Univ Calif Berkeley, Elect Res Lab, Berkeley, CA 94720 USA

[4] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimental shot-noise effects and line-edge roughness are reported for two positive and two negative tone chemically amplified resists (IBM Apex-E, Shipley UVIIHS, IBM ENR, and Shipley SAL-601, respectively) produced by high resolution (10 nm) focused ion-beam exposure. Scanning electron micrographs at the resolution limit for each resist (50-70 nm) showed that the positive resists became negative in tone and that edge roughness was reasonable. Shot-noise effects causing arrays of 10 nm posts to print or not to print at exposure events of 7, 14, and 28 average ions per post were observed in SAL-601 and agree with Poisson statistics. Single exposure events were not observed in any resist possibly owing to the fact that the working minimum exposure level at the resolution limit of the resist material required several overlapping events to print. (C) 1998 American Vacuum Society. [S0734-211X(98)08606-5].

引用

页码：3784 / 3788

页数：5