Crystallographic and recording characteristics of post-annealed Ba-ferrite sputtered films

被引：10

作者：

Morisako, A ^{[1
]}

Matsumoto, M ^{[1
]}

Naoe, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hexagonal Ba-ferrite films were prepared by a facing targets sputtering system at room temperature, 100 and 500 degrees C and successively annealed in the air to crystallize. The films prepared at low temperature exhibit coercivities ranging from 1.0 to 3.8 kOe upon elevating the annealing temperature from 650 to 900 degrees C. The read/write performance of Ba-ferrite rigid disk was evaluated by using a MIG type head and the recording density D-50 was 90kfrpi.

引用

页码：3819 / 3821

页数：3

共 7 条

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[7]

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