Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition

被引：74

作者：

Ivill, M ^{[1
]}

Overberg, ME

Abernathy, CR

Norton, DP

Hebard, AF

Theodoropoulou, N

Budai, JD

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[3] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(03)00200-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting oxides offer the potential for exploring and understanding spin-based functionality in a semiconducting host material. Theoretical predictions suggest that carrier-mediated ferromagnetism should be favored for p-type material. Cu2O is a p-type, direct wide bandgap oxide semiconductor that may hold interest in exploring spin behavior. In this paper, the properties of Mn-doped Cu2O are described. Activities focused on understanding Mn incorporation during thin-film synthesis, as well as magnetic characterization. The epitaxial films were grown by pulsed-laser deposition. X-ray diffraction was used to determine film crystallinity and to address the formation of secondary phases. SQUID magnetometry was employed to characterize the magnetic properties. Ferromagnetism is observed in selected Mn-doped Cu2O films, but appears to be associated with Mn3O4 secondary phases. In phase-pure Mn-doped Cu2O films, no evidence for ferromagnetism is observed. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2215 / 2220

页数：6

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