High mobility CdO films and their dependence on structure

The, properties of high-quality CdO films formed by low-pressure chemical vapor deposition are reported for the first time. The relationships between deposition parameters, thin-film formation, and material properties are investigated. CdO films are formed between 100 and 450 degreesC, using a dimethylcadmium precursor and oxygen gas. The CdO structure, composition, and the optical and electrical properties of the films are sensitive to the deposition temperature. A carrier concentration of 1.93 X 10(21) cm(-3), which may be introduced by structure defect, was achieved on the film deposited at a temperature of 100 degreesC. A Hall mobility of 216 cm(2) V-1 s(-1) was achieved at deposition temperature of 450 degreesC with carrier concentration of 2.35 X 10(19) cm(-3). The mobilities are much higher than those reported for CdO films made by other techniques. (C) 2001 The Electrochemical Society.