Identification of P dopants at nonequivalent lattice sites of the Si(111)-(2x1) surface

被引:14
作者
Garleff, J. K.
Wenderoth, M.
Ulbrich, R. G.
Suergers, C.
von Loehneysen, H.
Rohlfing, M.
机构
[1] Univ Gottingen, IV Phys Inst, D-37077 Gottingen, Germany
[2] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany
[3] Univ Karlsruhe, DFG Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany
[4] Forschungszentrum Karlsruhe, Inst Festkorperphys, D-76021 Karlsruhe, Germany
[5] Univ Osnabruck, Fachbereich Phys, D-49069 Osnabruck, Germany
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 12期
关键词
D O I
10.1103/PhysRevB.76.125322
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Substitutional phosphorus atoms at the Si(111)-(2x1) surface have been studied with scanning tunneling microscopy at 8 K. Four different types of the P-induced contrast pattern are distinguished due to their voltage-dependent contrast. Three of them are identified as substitutional P atoms on distinct lattice sites by their spatial symmetry and by comparison with ab initio calculations of the local density of electronic states of substitutional P atoms. The fourth pattern of a P-induced contrast cannot be attributed to the remaining fourth site of the pi-bonded chain. This raises questions not only on the origin of this pattern but also on the absence of substitutional P atoms on one lattice position in this surface.
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页数:5
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