Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs -: art. no. 026407

被引：55

作者：

Mahieu, G

Grandidier, B

Deresmes, D

Nys, JP

Stiévenard, D

Ebert, P

机构：

[1] IEMN, CNRS, UMR 8520, Dept ISEN, F-59046 Lille, France

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.94.026407

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low temperatures. The ground and first excited states are found to have a nonspherical symmetry. In particular, the first excited acceptor state has a T(d) symmetry. Its major contribution to the STM empty-state images allows us to explain the puzzling triangular shaped contrast observed in the empty-state STM images of acceptor impurities in III-V semiconductors.

引用

收藏

页数：4

相关论文

共 17 条

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].

BALDERES.A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539

[2] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (08) :4714-4722

[3] A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(110) surfaces [J].

de Kort, R ;

Kets, W ;

van Kempen, H .

SURFACE SCIENCE, 2001, 482 :495-500

[4] Zn- and Cd-induced features at the GaAs(110) and InP(110) surfaces studied by low-temperature scanning tunneling microscopy [J].

de Kort, R ;

van der Wielen, MCMM ;

van Roij, AJA ;

Kets, W ;

van Kempen, H .

PHYSICAL REVIEW B, 2001, 63 (12)

[5]

DINGLE RB, 1955, PHILOS MAG, V46, P831

[6]

Feenstra RM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165204

[7] OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS [J].

FEENSTRA, RM ;

WOODALL, JM ;

PETTIT, GD .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1176-1179

[8] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929

[9] EFFECTIVE-MASS SINGLE AND DOUBLE ACCEPTOR SPECTRA IN GAAS [J].

FIORENTINI, V .

PHYSICAL REVIEW B, 1995, 51 (15) :10161-10163

[10] DIRECTIONAL RESOLUTION OF THE GAAS HEAVY-HOLE BAND DISPERSION AND PHOTOELECTRON-MOMENTUM ORIENTATION FROM HOT-ELECTRON LUMINESCENCE [J].

HACKENBERG, W ;

HUGHES, HP .

PHYSICAL REVIEW B, 1994, 49 (12) :7990-7999