Persistent and transient photoconductivity in oxygen-deficient La2/3Sr1/3MnO3-δ thin films -: art. no. 174423

被引:85
作者
Cauro, R
Gilabert, A
Contour, JP
Lyonnet, R
Medici, MG
Grenet, JC
Leighton, C
Schuller, IK
机构
[1] Univ Nice, LTE, CNRS, UMR 6595, F-06108 Nice 02, France
[2] Univ Nice, LPMC, CNRS, UMR 6622, F-06108 Nice 02, France
[3] Thomson CSF, CNRS, UMR 0137, Unite Mixte Phys, F-91404 Orsay, France
[4] Univ Calif San Diego, Phys Dept 0319, La Jolla, CA 92093 USA
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 17期
关键词
D O I
10.1103/PhysRevB.63.174423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Light illumination produces major, interesting changes of the electrical properties of oxygen deficient La2/3Sr1/3MnO3-delta thin films. At small oxygen deficiency, the classical insulator-metal (I-M) transition at a temperature T-p decreases with increasing oxygen deficiency. The low-temperature metallic behavior in darkness shows a persistent increase of the conductivity with light. This photoconductivity increases with oxygen deficiency (from a few to 60%). At large oxygen deficiency, the films are semiconducting in darkness, from helium to room temperature and light induces a transient photoconductivity and a low-temperature I-M transition. The intriguing possibility of collective light induced magnetism is discussed.
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页数:6
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