Trap density in conducting organic semiconductors determined from temperature dependence of J-V characteristics

被引:151
作者
Kumar, V
Jain, SC
Kapoor, AK
Poortmans, J
Mertens, R
机构
[1] Solid State Phys Lab, Delhi 110054, India
[2] IMEC, B-3001 Louvain, Belgium
关键词
D O I
10.1063/1.1582552
中图分类号
O59 [应用物理学];
学科分类号
摘要
Space charge limited currents in organic semiconductors are frequently observed to obey the power law J-V-m and are attributed to an exponential distribution of traps having two parameters, namely the characteristic distribution energy E-t and the trap concentration H-t. We determine these parameters from the J(V) characteristics at two or more temperatures reported in literature. (C) 2003 American Institute of Physics.
引用
收藏
页码:1283 / 1285
页数:3
相关论文
共 12 条
[1]   Temperature dependent device characteristics of organic light-emitting devices [J].
Berleb, S ;
Mückl, AG ;
Brütting, W ;
Schwoerer, M .
SYNTHETIC METALS, 2000, 111 :341-344
[2]   Electron and hole transport in poly(p-phenylene vinylene) devices [J].
Blom, PWM ;
deJong, MJM ;
Vleggaar, JJM .
APPLIED PHYSICS LETTERS, 1996, 68 (23) :3308-3310
[3]   Space-charge limited conduction with traps in poly(phenylene vinylene) light emitting diodes [J].
Campbell, AJ ;
Bradley, DDC ;
Lidzey, DG .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :6326-6342
[4]  
Hwang W., 1981, Electrical transport in solids
[5]   Temperature dependence of carrier transport in conducting polymers: Similarity to amorphous inorganic semiconductors [J].
Kapoor, AK ;
Jain, SC ;
Poortmans, J ;
Kumar, V ;
Mertens, R .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3835-3838
[6]  
KIEBOOMS R, 2001, HDB ADV ELECT PHOTON, V8, pCH1
[7]  
Lampert M. A., 1970, CURRENT INJECTION SO
[8]   REFINEMENT ON THE THEORIES OF MEASUREMENT FOR TRAP DENSITY FROM SPACE-CHARGE-LIMITED CURRENT [J].
LU, LG .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :261-264
[9]   SPACE-CHARGE-LIMITED CURRENTS IN ORGANIC CRYSTALS [J].
MARK, P ;
HELFRICH, W .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :205-&
[10]  
Mott N. F., 1948, ELECT PROCESSES IONI