Optoelectronic devices based on evaporated pentacene films

被引：29

作者：

Voz, C ^{[1
]}

Puigdollers, J ^{[1
]}

Martín, I ^{[1
]}

Muñoz, D ^{[1
]}

Orpella, A ^{[1
]}

Vetter, M ^{[1
]}

Alcubilla, R ^{[1
]}

机构：

[1] Univ Politecn Catalunya, Dept Elect Engn, ES-08034 Barcelona, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 87卷 / 1-4期

关键词：

pentacene; schottky diode; excitons;

D O I：

10.1016/j.solmat.2004.07.039

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium-tin-oxide layer. The pentacene layer was evaporated in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature and moderate deposition rates (< 10 angstrom/s). Optical measurements evidence absorption peaks at energy positions 1.86, 1.97, 2.13, 2.3 and 2.5 eV, corresponding to singlet states of the lowest unoccupied molecular orbital of pentacene. The current-voltage characteristics show good rectifying behaviours. Finally, a clear antibatic response is observed in the external quantum efficiency of the photodiodes when illuminated through the indium-tin-oxide contact. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：567 / 573

页数：7

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