Cobalt(II) β-diketonate adducts as new precursors for the growth of cobalt oxide films by liquid injection MOCVD

被引：28

作者：

Pasko, S

Abrutis, A

Hubert-Pfalzgraf, LG

Kubilius, V

机构：

[1] Vilnius State Univ, Dept Chem, LT-2006 Vilnius, Lithuania

[2] Univ Lyon 1, IRC, CNRS, F-69626 Villeurbanne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 262卷 / 1-4期

关键词：

metalorganic chemical vapor deposition; cobalt; metalorganic compounds; oxides;

D O I：

10.1016/j.jcrysgro.2003.10.077

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

New metalorganic compounds-adducts of cobalt(II) acetylacetonate (acac) and cobalt(II) 2,2,6,6-tetramethyl-3,5-heptanedionate (thd) with N,N,N',N'-tetramethyl-1,2-diaminoethane have been synthesized and studied as potential precursors for liquid injection metalorganic chemical vapor deposition of CO3O4 films. The properties of the films were compared with those deposited using standard [Co(acac)(2)](4) and Co(thd)(2) precursors. Depositions were carried out at 350-600degreesC on LaAlO3 (10 0), sapphire (R-plane), MgO (100) and Si (10 0) substrates. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. Depending on substrate material, highly (1 10) or (100) textured CO3O4 films have been deposited; moreover, films exhibited preferential in-plane orientation. No significant difference has been found in the quality of CO3O4 films deposited from different precursors. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：653 / 657

页数：5

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