In-situ heteroepitaxial growth of CeO2/YBa2Cu3O7 films on sapphire by injection CVD

A new principle for stable generation of precursors from volatile vapours in a CVD reactor was developed for in-situ deposition of bilayers CeO2/YBa2Cu3O7 on sapphire (<1(1)over bar 02>) substrates. This principle is based on computer controlled injection of precise microdoses of liquid precursors or solutions of solid precursors in an organic solvent in an evaporator of CVD reactor, ''flash evaporation'' and rapid vapour transport to the deposition zone. Application of several injections sources permits in-situ deposition of multilayered oxide structures, Heteroepitaxially grown CeO2 (approximate to 0.2 mu m)/YBa2Cu3O7 (0.5-1 mu m)/Al2O3 structures exhibited a sharp superconducting transition at about 90 K (Delta T = 0.6-1 K) and had a critical current density of about 10(5) A/cm(2).