Limitations to n-type doping in diamond: The phosphorus-vacancy complex

被引：68

作者：

Jones, R ^{[1
]}

Lowther, JE ^{[1
]}

Goss, J ^{[1
]}

机构：

[1] UNIV EXETER,DEPT PHYS,EXETER EX4 4QL,DEVON,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In spite of large concentrations of phosphorus being incorporated into. diamond, the material often remains insulating. It is argued that this occurs through the formation of phosphorus-vacancy complexes which are deep accepters and compensate any donor. The complex is analyzed using a first-principles cluster method. In the ionized state, the defect is diamagnetic and cannot give rise to any internal optical transitions although broad band donor-acceptor transitions are expected-and observed-in material codoped with nitrogen. (C) 1996 American Institute of Physics.

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页码：2489 / 2491

页数：3

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