Electrical properties of reactively sputtered CNx films

被引：33

作者：

Monclus, MA ^{[1
]}

Cameron, DC

Chowdhurry, AKMS

机构：

[1] Dublin City Univ, Mat Proc Res Ctr, Dublin 9, Ireland

[2] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland

来源：

THIN SOLID FILMS | 1999年 / 341卷 / 1-2期

关键词：

magnetron sputtering; carbon nitride; electrical properties;

D O I：

10.1016/S0040-6090(98)01546-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride (CNx) films have been deposited with an opposed-targct Penning-type sputtering source. The DC resistivity of films with different nitrogen content has been investigated using the four-point probe method and van der Pauw structures. The resistivity of nitrogen containing films is considerably higher than nitrogen-free films. From temperature-dependent resistivity measurements, the activation energy was found to increase with nitrogen content and from optical absorption measurements, the optical band,gap was calculated as 0.4 eV for pure carbon films and small gaps ( similar to 0.1 eV) were found for nitrogen containing films. The resistivity and the refractive index of the films was found to correlate with the C=N bond density. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：94 / 100

页数：7

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