Synthesis and characterization of amorphous carbon nitride films

被引：45

作者：

Holloway, BC

Shuh, DK

Kelly, MA

Tong, W

Carlisle, JA

Jimenez, I

Sutherland, DGJ

Terminello, LJ

Pianetta, P

Hagstrom, S

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV CHEM SCI, BERKELEY, CA 94720 USA

[2] LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94551 USA

来源：

THIN SOLID FILMS | 1996年 / 290卷

关键词：

carbon nitride; amorphous films; X-ray photoelectron spectroscopy; near edge X-ray absorption fine structure (NEXAFS);

D O I：

10.1016/S0040-6090(96)09203-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the high-pressure, 1066 Pa (8 Torr), chemical vapor deposition (CVD) synthesis of amorphous carbon nitride films using a d.c. glow discharge technique. X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure were used to study the him stoichiometry and bonding as a function of substrate temperature and flux of hydrogen to the growth surface. Experiments show that the film stoichiometry is constant with substrate temperature up to 600 degrees C, above which film growth was not observed. The addition of small amounts (1.5 at.%) of molecular hydrogen causes poisoning of film growth. Multiple sp(2) bonding states, with little sp(3) bonding, were present in the films. Scanning electron microscopy of the films reveals an unusual filamentary growth phase.

引用

页码：94 / 98

页数：5

共 20 条

[1] GROWTH AND CHARACTERIZATION OF C-N THIN-FILMS [J].