DIAMOND GROWTH BY A NEW METHOD BASED UPON SEQUENTIAL EXPOSURE TO ATOMIC CARBON AND HYDROGEN

被引：23

作者：

KELLY, MA

OLSON, DS

KAPOOR, S

HAGSTROM, SB

机构：

[1] Department of Materials Science and Engineering, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of being able to grow diamond by a sequential process, and from the simple constituents of atomic carbon and hydrogen, are discussed.

引用

页码：2502 / 2504

页数：3

共 8 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].