Diameter-depended thermal expansion properties of Bi nanowire arrays

The lattice parameter of bismuth nanowires has been measured using the in situ high-temperature x-ray diffraction method. Single-crystalline Bi nanowire arrays with the diameters from 10 nm to 250 nm have been fabricated within the porous anodic alumina membranes by a pulsed electrodeposition technique. Different temperature dependencies of lattice parameter and thermal expansion coefficient were found for Bi nanowires with different diameters, and there is a transition from positive thermal expansion coefficient at low temperature to negative one at high temperature, and the transition temperature shifts to high temperature with the increase in the diameter of Bi nanowires. (c) 2005 American Institute of Physics.