Nitrogen assisted etching of graphene layers in a scanning electron microscope

被引：61

作者：

Fox, D. ^{[1
,2
,3
]}

O'Neill, A. ^{[1
,2
]}

Zhou, D. ^{[1
,2
,3
]}

Boese, M. ^{[3
]}

Coleman, J. N. ^{[1
,2
]}

Zhang, H. Z. ^{[1
,2
,3
]}

机构：

[1] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[3] Trinity Coll Dublin, CRANN Adv Microscopy Lab, Dublin 2, Ireland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

基金：

爱尔兰科学基金会;

关键词：

LITHOGRAPHY; NANORIBBONS; DEVICES; BEAM;

D O I：

10.1063/1.3601467

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

We describe the controlled patterning of nanopores in graphene layers by using the low-energy (<10 keV) focused electron beam in a scanning electron microscope. Regular nanometer-sized holes can be fabricated with the presence of nitrogen gas. The effect of the gas pressure, beam current, and energy on the etching process are investigated. Transmission electron microscopy, coupled with plasmon energy loss imaging, reveals the microstructure modification of the etched graphene. A nitrogen-ion assisted etching mechanism is proposed for the controlled patterning. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601467]

引用

页数：3

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