Electrodeposition of CuInS2 from aqueous solution .2. Electrodeposition of CuInS2 film

被引：76

作者：

Yukawa, T ^{[1
]}

Kuwabara, K ^{[1
]}

Koumoto, K ^{[1
]}

机构：

[1] NAGOYA UNIV,SCH ENGN,DEPT APPL CHEM,CHIKUSA KU,NAGOYA,AICHI 46401,JAPAN

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

关键词：

deposition process; electrochemistry; solar cells; sulphides;

D O I：

10.1016/S0040-6090(96)08545-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper indium disulphide, CuInS2 thin films were successfully prepared by electrodeposition without usual heat treatment in H2S atmosphere. Thin films were deposited from acidic aqueous solution containing CuSO4, In-2(SO4)(3) and Na2S2O3 at -0.9 V vs. Ag/AgCl for 300-1200 s. Single phase CuInS2 films were obtained at pH about 1.5 by the correct adjustment of the Cu2+/In3+ ratio, with the concentration of Na2S2O3 fixed at 400 mM. Well-crystallized films were obtained by annealing in vacuum at 673 K. From EDX analysis, it was found that the compound CuInS2 did not always exist in exact stoichiometry of Cu:In:S = 1:1:2. The conduction type of the film changed from p to n in the indium-rich region. This result suggests the possibility of controlling the properties of thin films by varying the concentration of each chemical in the initial electrolytic solution.

引用

页码：151 / 153

页数：3

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