Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write

被引：41

作者：

Chao, LC ^{[1
]}

Steckl, AJ ^{[1
]}

机构：

[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible and infrared photoluminescence (PL) have been obtained from Pr-implanted GaN films using focused-ion-beam (FIB) direct write utilizing a Pr-Pt liquid alloy ion source. FIB implantation was performed on GaN films grown by molecular-beam epitaxy (MBE), hydride vapor-phase epitaxy, and metalorganic chemical-vapor deposition. After annealing, strong room-temperature emission was observed in the red (at 650 nm) and in the infrared (at several wavelengths including 0.96, 1.3, and 1.9 mm). Essentially identical PL spectra were obtained in the implanted GaN films as in the in situ Pr-doped GaN films grown by MBE. (C) 1999 American Institute of Physics. [S0003-6951(99)04716-6].

引用

页码：2364 / 2366

页数：3

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