Relative dielectric constant of epitaxial BaTiO3 thin films in the GHz frequency range

被引：41

作者：

Hamano, T ^{[1
]}

Towner, DJ

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1635967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relative dielectric constant of epitaxial BaTiO3 thin films deposited on MgO was determined over the frequency range from 0.05 to 40.05 GHz. Coplanar stripline waveguides were formed on the BaTiO3 films and the dielectric constant was determined by matching the reflection (S-11-) parameter by measurement with that by simulation. The dielectric constants were similar to2200 and similar to500 at <1 and 40 GHz, respectively. The frequency response of the dielectric constant is well described by a Curie-von Schweidler power law with an exponent of 0.29. The effective index of the coplanar stripline structure on the BaTiO3 film and MgO substrate was 3.6. (C) 2003 American Institute of Physics.

引用

页码：5274 / 5276

页数：3

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